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5-V Low-Drop Voltage Regulator
TLE 4261-2
Features * * * * * * * * * * * * * * High accuracy 5 V 2% Very low-drop voltage Very low quiescent current Low starting-current consumption Proof against reverse polarity Input voltage up to 42 V Overvoltage protection up to 65 V ( 400 ms) Short-circuit-proof External setting of reset delay Integrated watchdog circuit Wide temperature range Overtemperature protection Suitable for automotive use EMC proofed (100 V/m) Ordering Code Q67000-A9110 Q67000-A9140 Q67006-A9193 Package P-TO220-7-1 P-DSO-20-6 (SMD) P-TO220-7-8 (SMD)
P-TO220-7-1
Type w TLE 4261-2 w TLE 4261-2 G w TLE 4261-2 GL
P-DSO-20-6
w Please also refer to the new pin compatible device
TLE 4271
P-TO220-7-8 Functional Description TLE 4261-2 is a high accuracy 5-V low-drop voltage regulator in a P-TO220-7 or in a PDSO package. The maximum input voltage is 42 V (65 V/ 400 ms). The device can produce an output current of more than 500 mA. It is short-circuit-proof and incorporates temperature protection that disables the circuit at impermissibly high temperatures.
Semiconductor Group
1
1998-11-01
TLE 4261-2
Application Description The IC regulates an input voltage VI in the range 6 V < VI < 40 V to VQrated = 5.0 V. A reset signal is generated for an output voltage VO of < 4.75 V. The reset delay can be set with an external capacitor. A connected microprocessor is monitored by the integrated watchdog circuit; if pulses are missing, the reset output is set low. The pulse repetition rate can be set within wide limits with the capacitor for reset delay. If this input is connected to a voltage of > 6 V, the watchdog function is deactivated. The device also features an inhibit input, which is activated by a voltage of > 6 V and then works on this input through internal hysteresis up to approx. 3 V. A voltage of < 2 V on the inhibit input turns off the regulator, current drain then dropping to max. 50 A. Design Notes for External Components The input capacitor CI causes a low-resistant powerline and limits the rise times of the input voltage. The IC is protected against rise times up to 100 V/s. It is possible to damp the tuned circuit consisting of supply inductance and input capacitance with a resistor of approx. 1 in series to CI. The output capacitor maintains the stability of the regulating loop. Stability is guaranteed with a rating of 22 F min. at an ESR of 3 max. in the operating temperature range. Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and controls the base of the series PNP transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage drops below 95.5% of its typical value for more than 2 s, a reset signal is triggered on pin 3 and an external capacitor discharged on pin 5. The reset signal is not cancelled until the voltage on the capacitor has exceeded the upper switching threshold VDT. A positive-edge-triggered watchdog circuit monitors the connected microprocessor and will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level on the inhibit input and the current consumption drops to < 50 A. The IC also incorporates a number of circuits for protection against: * * * * Overload Overvoltage Overtemperature Reverse polarity
Semiconductor Group
2
1998-11-01
TLE 4261-2
Pin Configuration (top view) TLE 4261-2 TLE 4261-2 GL
1
2
345
6
7
V
INH GND Watch QRES DRES VQ
AEP00592
Pin Definitions and Functions Pin No. Symbol Function 1
VI
Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vihicle electric system. Oscillation of the output voltage can be damped by a resistor of approx. 1 in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open collector output controlled by the reset delay. Ground Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output; block to ground using a capacitor of 22-F. ESR is 3 in the operating temperature range.
2 3 4 5 6 7
INH QRES GND DRES Watch
VQ
Semiconductor Group
3
1998-11-01
TLE 4261-2
TLE 4261-2 G
N.C. N.C. QRES GND GND GND GND N.C. DRES N.C.
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
AEP01182
INH N.C. V GND GND GND GND N.C. VQ Watch
Pin No. Symbol Function 18
VI
Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vihicle electric system. Oscillation of the output voltage can be damped by a resistor of approx. 1 in series with the input capacitor. Inhibit; switches off the IC when low. Reset output; open collector output controlled by the reset delay. Ground Reset delay; wired to ground using a capacitor. Watchdog; monitors the microprocessor when active. 5-V output; block to ground using a capacitor of 22-F. ESR is 3 in the operating temperature range. Not connected
20 3 4 -7, 14 - 17 9 11 12 1, 2, 8, 10, 13, 19
INH QRES GND DRES Watch
VQ
N.C.
Semiconductor Group
4
1998-11-01
TLE 4261-2
Overvoltage Monitoring
Temperature Sensor
Saturation Control and Protection
Input
1 (18) BANDGAP Reference Control Amplifier Buffer
+ -
7 Output (12) RESET Generator 5 (9) 3 (3) RESET Delay RESET Output
Adjustment
Inhibit (4-7) (14-17) 4 GND
Watchdog
(20) 2 Inhibit
(11) 6 Watchdog
AEB00002
Block Diagram
Semiconductor Group
5
1998-11-01
TLE 4261-2
Absolute Maximum Ratings TJ = - 40 to 150 C Parameter Symbol Limit Values min. Input Input voltage Input current Inhibit Voltage Current Reset Output Voltage Current Ground Current Reset Delay Voltage Current Output Differential voltage Current max. Unit Remarks
VI VI II
- 42 - -
42 65 1.6
V V A
-
t 400 ms
-
V2 I2
- 0.3 -
42 5
V mA
- -
VR IR
- 0.3 -
42 -
V -
- internally limited
IGND
-
0.5
A
-
VD ID
- 0.3 -
42 -
V -
- internally limited
VI - VQ IQ
- 5.25 VI - 1.4
V A
- -
Semiconductor Group
6
1998-11-01
TLE 4261-2
Absolute Maximum Ratings (cont'd) TJ = - 40 to 150 C Parameter Symbol Limit Values min. Temperature Junction temperature Storage temperature Operating Range Input voltage Junction temperature Thermal Resistance System-air System-case
1) 2)
Unit
Remarks
max.
Tj Tstg
- - 50
150 150
C C
- -
VI 1) Tj
- - 40
32 150
V C
- -
RthSA RthSC
- -
65 (70)2) 3 (15)2)
K/W K/W
- -
see diagram Figures in parenthesis refer to TLE 4261-2 G.
Semiconductor Group
7
1998-11-01
TLE 4261-2
Characteristics VI = 13.5 V; Tj = 25 C; V5 6 V (unless otherwise specified) Parameter Symbol Limit Values min. Normal Operation Output voltage Output current Output current Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Current consumption Iq = II - IQ Drop voltage Drop voltage Load regulation Supply-voltage regulation Supply-voltage regulation Ripple rejection typ. max. Unit Test Condition
VQ IQ IQ Iq Iq Iq Iq VDR VDR VQ VQ VQ SVR
4.9 - 500 - - - - - - - - - - -
5.0 -
5.1 50
V A mA mA mA mA mA V V mV mV mV dB
1000 - - - 5.0 40 3.5 10 65 80
IQ = 100 mA - 40 C Tj 125 C 0 V VI 2 V; V2 = VI; - 40 C Tj 125 C VI = 17 V to 28 V IQ = 0 mA, VW >6 V
6 V VI 28 V IQ = 150 mA 6 V VI 28 V IQ = 500 mA VI 6 V IQ = 500 mA VI = 4.5 V; IQ = 0.5 A VI = 4.5 V; IQ = 0.15 A 25 mA IQ 500 mA VI 6 V to 28 V; IQ = 100 mA VI 6 V to 16 V; IQ = 100 mA f = 100 Hz; Vr = 0.5 VSS
0.35 0.5 0.2 15 15 5 54 0.3 35 50 25 -
Temperature drift of output VQ voltage
2x - 10-4
1/C -
Semiconductor Group
8
1998-11-01
TLE 4261-2
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; V5 6 V (unless otherwise specified) Parameter Symbol Limit Values min. Inhibit Operation Current consumption Current consumption Switching threshold for inhibit Switching threshold for inhibit Reset Generator Switching threshold Saturation voltage, reset output Reverse current Charge current Switching threshold Delay switching threshold Saturation voltage, delay output Delay time Delay time typ. max. Unit Test Condition
I1 I2 V2 V2
- - 5.0 2.0
- - 5.5 2.7
50 100 6.0 3.7
A A V V
V2 = 2 V; IQ = 0 V2 = 6 V
IC turned ON IC turned OFF
VRT VR IR ID VST VDT VC tD tt
94 - - 0.9 2.25 - - -
95.5 97 0.25 0.40 - 1 - 10 2 1 1.1 100 - -
% V A V V mV ms s
in % of VQ; IQ > 500 mA; VI = 6 V
IR = 1 mA VR = 5 V VC = 1.5 V
- -
18.75 25
31.25 A
2.50 2.75
VI = 4.5 V and Id CD = 100 nF
-
Semiconductor Group
9
1998-11-01
TLE 4261-2
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; V5 6 V (unless otherwise specified) Parameter Symbol Limit Values min. Watchdog Turn-OFF voltage Discharge current Switching voltage Pulse intervall General Data Turn-Off voltage Turn-Off hysteresis Leakage current Reverse output current typ. max. Unit Test Condition
VW ICD VCD TW
5.2 5.6 2.95 -
5.6 7.5 35
6.0 9.4 -
V A V ms
-
VC = 1.5 V
-
3.05 3.15
CD = 100 nF
VIOFF
VI
41 - - -
43 6.5 - -
45 - 50 1.5
V V A mA
IQ < 1 mA
-
IQS IQR
VQ = 0 V; VI = 45 V VQ = 5 V; VI and V2
open
Semiconductor Group
10
1998-11-01
TLE 4261-2
Input 6 V to 40 V
1 470 nF 2 6
7 5 22 F 100 nF
Output 100 k RESET
TLE 4261-2
3
From Microcontroller
4
4.7 k From C
AES01455
KL15 7 V to 18 V
Application Circuit
1000 F
1
7 Q / SC 22 F
470 nF
TLE 4261-2
V +VR
4.7 k
VQ
3
2 5 d CD 100 nF 4 GND 6
3
R
VR
V2
VC
VW
VDr = V -VQ
AES01508
V SVR = 20 log R VQ
Test Circuit
Semiconductor Group
11
1998-11-01
TLE 4261-2
Time Responce in Watchdog Condition
V Wmin > 6 V VW V OFF V
3.3 V V RT V V Q RT
dV D = dt C D
V DT VC V
ST
tD VR
Overvoltage OverSpike voltage
Overtemperature
Undervoltage
Secondary Spike
Shortcircuit on Output
AET00593
Timing with Watchdog OFF
Semiconductor Group 12 1998-11-01
TLE 4261-2
Drop Voltage versus Output Current
800 mV 700
AED00586
Output Voltage versus Input Voltage
12
AED00027
VDr
VQ
V 10
V = 4.5 V
600
RL =10
8
500 400 300 200
T j = 125 C
6
4
T j = 25 C
100 0
2
0
100
200
300
400
mA
600
0
0
2
4
6
8
V 10
V
Q
Current Consumption versus Input Voltage
120
AED00026
Current Consumption versus Output Current
80 mA 70
AED00588
q mA
100
q
V = 13.5 V
R L =10
60 50 40 30
80
60
40
20
20
10 0
0 10 20 30 40 V 50
V
0
0
100
200
300
400
mA
600
Q
Semiconductor Group
13
1998-11-01
TLE 4261-2
Charge Current ID and Discharge Current ICD versus Temperature
40 A 35 30 25 20 15 10 5 0 -40 V = 13.5 V V C = 1.5 V
AED01322
Switching Voltage VCD and VST versus Temperature
4
AED01323
V
V 3
V = 13.5 V V Cd
d
2
V ST
Cd
1
0
40
80
120 C 160 Tj
0 -40
0
40
80
120 C 160 Tj
Pulse Interval TW versus Temperature
1.6 ms T W 1.4 1.2 1.0 0.8 0.6
AED01324
Output Voltage versus Temperature
5.20
AED00028
VQ
V 5.10
V = 13.5 V C d = 100 nF
5.00
V = 13.5 V
4.90
4.80
0.4 0.2 0 -40
4.70
0
40
80
120 C 160 Tj
4.60 -40
0
40
80
120 C 160
j
Semiconductor Group
14
1998-11-01
TLE 4261-2
Current Consumption of Inhibit at the Switching Point versus Temperature
120
AED01325
Output Current versus Input Voltage
1.2
AED00594
20 100
A
Q mA
1.0
T j = 25 C
80
0.8
60 ON 40
0.6
0.4
20
OFF
0.2
0 -40
0
0
40
80
120 C 160 Tj
0
10
20
30
40 V 50
V
Input Step Responce
2 V 1 0
AED00595
Load Step Responce
mA 500 _ t R = t F ~ 1 s 25
AED00596
V
Q
40 VQ mV 20 0 -20 -40 -10
200 VQ mV 100
C Q = 22 s
C Q = 22 s
0 -100
0
10
20
30
s
t
50
-200 -10
0
10
20
30
s
t
50
Semiconductor Group
15
1998-11-01
TLE 4261-2
Package Outlines P-TO220-7-1 (Plastic Transistor Single Outline)
10 +0.4 10.2 -0.2 3.75
+0.1
4.6 -0.2 1 x 45 1.27
+0.1
2.8
19.5 max
16 0.4
8.8 -0.2
2.6 0.4 +0.1 8.4 0.4
8.6 0.3
15.4 0.3
GPT05108
1 1.27
7 0.6
+0.1 1)
0.6 M 7x
4.5 0.4
1) 0.75 -0.15 at dam bar (max 1.8 from body) 1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Korper)
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 16 1998-11-01
10.2 0.3
TLE 4261-2
P-TO220-7-8 (Plastic Transistor Single Outline)
4.6 1.27 10.2 8.0 1)
3.5
0.2 2.6
10.1
0.6 1.27 6 x 1.27 = 7.62
0.4
GPT05874
1) shear and punch direction burr free surface
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 17
1.5
8.8
Dimensions in mm 1998-11-01
TLE 4261-2
P-DSO-20-6 (Plastic Dual Small Outline)
2.65 max
0.35 x 45
2.45 -0.2
0.2 -0.1
1.27 0.35 +0.15 2) 20 0.2 24x 11 0.1
0.4 +0.8 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 18
0.23 +0.0 9 8 ma x
7.6 -0.2 1)
Dimensions in mm 1998-11-01

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